Wafer Sputtering Coater System For Metal/Dielectric Thin Film Deposition In Semiconductor/Optical
Model: Lith-PD-JS05-Wafer Sputtering Coater System
Product Overview
The Lith-PD-JS05 magnetron sputtering system is equipped with multiple sputtering sources, capable of depositing metallic, semiconducting, and dielectric materials. It supports the fabrication of multilayer thin films and co-sputtered alloy films with high precision.
Key Features
· Compact & Integrated Design: Space-saving layout with refined aesthetics, optional sample-loading functionality.
· High Uniformity Coating: Features 4× magnetron sputtering targets (2–4 inches), compatible with 2–8 inch wafers. Substrate holder ensures uniformity within ±3%–5% for 8-inch wafers.
· Flexible Control Options: Siemens PLC + touchscreen (manual/automatic) or PC + PLC full-automatic control.
Technical Specifications
· System Dimensions (L×W×H): 1400 × 1300 × 1900 mm
· Chamber Dimensions (L×W×H): 500 × 500 × 500 mm (PD-500C) / 600 × 600 × 500 mm (PD-600C)
· Substrate Stage: Max heating temperature 500–800°C
· Base Pressure: ≤5 × 10⁻⁵ Pa
· Pumping & Holding: Achieves 8 × 10⁻⁴ Pa within ≤30 min; pressure rise ≤8 Pa over 12 hours.
· Target Configuration: 4× sputter guns (2–3 inches or 2–4 inches), coating area 2–6 inches.
Applications & Advantages
Ideal for R&D and small-batch production, the PD-500C/600C excels in depositing high-quality, uniform thin films for optics, electronics, and functional coatings. Its modular control and excellent temperature/vacuum stability cater to advanced material research and industrial precision demands.
This vs. Conventional Model
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Feature
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Lith-PD-JS05
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Conventional Systems
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Advantage
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Uniformity (8-inch wafer)
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±3%–5%
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±5%–10% or worse
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Higher film consistency for precision applications
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System Footprint
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Compact (1400×1300×1900 mm)
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30–50% larger
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Saves lab/cleanroom space
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Substrate Heating
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500–800°C
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Typically 300–600°C
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Supports high-temperature depositions (e.g., oxides, nitrides)
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Base Vacuum
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≤5×10⁻⁵ Pa
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~1×10⁻⁴ Pa
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Better for reactive sputtering, reduced contamination
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Pressure Stability
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≤8 Pa over 12 hours
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Frequent drift (>10 Pa in hours)
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Longer process stability
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Control Options
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PLC + Touchscreen or PC + PLC
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Manual or basic PLC
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Flexible automation, better reproducibility
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Target Configuration
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4× guns (2–4 inch)
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Often 2–3 guns (2–3 inch)
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Wider material selection, co-sputtering capability
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Coating Area
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2–8 inch wafers
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Typically ≤6 inch
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Broader substrate compatibility
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Key Takeaways
· Precision & Consistency: Superior uniformity (±3–5%) vs. conventional (±5–10%).
· Compact & Efficient: 30% smaller footprint without sacrificing performance.
· High-Temp & Vacuum Stability: Enables advanced materials (e.g., optical coatings, semiconductors).
· Automation Ready: PC-controlled processes improve repeatability over manual systems.
Ideal For: R&D labs, semiconductor fabs, and optical coating producers needing high-repeatability, multi-material deposition in a space-efficient design.
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